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Modelos para señales fuertes

continuous flows in the emitter and collector are in normal operation by: The internal power base is mainly by diffusion and

Where: _I

E is the current emitter.

I C is the collector current. Α

T is the direct current gain in common base configuration. (From 0.98 to 0.998)

I

ES

is the reverse saturation current of base-emitter diode (in the order of 10

-15 -12

to 10 amps)

V

T is the thermal voltage k

T / q

• (approximately 26 mV at room temperature ≈ 300 K). V BE
• is base-emitter voltage. _{W is the width of the base.}
The collector current is slightly less than the emitter current, because the value of αT is very close to 1.0. In the bipolar junction transistor is a small variation of the base-emitter current generates a large change in collector-emitter current. The relationship between the current collector-emitter to the base-emitter is called gain, β or hFE. A β value of 100 is typical for bipolar transistors smaller. In a typical configuration, a very weak signal current flowing through the base-emitter to control the current emitter-collector. α β is related through the following relationships:
• _{issuer Efficiency:} ^{Other equations are used to describe the three streams in any region of the transistor are expressed below . These equations are based on the transport model of a bipolar junction transistor.}
• Where: i
C is the collector current.
• i B
is the base current.
i

E is the emitter current.

F

β is the active gain common-emitter (20 to 500)

R

β is the inverse common-emitter gain (0 to 20)

I

S

is the reverse saturation current (in the order of 10

-15 -12

to 10 amps)

• V _{T is the thermal voltage k}
• T / q _{(approximately 26 mV at room temperature ≈ 300 K).}
• V BE _{is the base-emitter voltage.}
• V BC is the base-collector voltage.
• Posted by: Emmanuel Angel