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Operation






idealized characteristic of a bipolar transistor.

In a normal configuration, the emitter-base directly and is polarized in the base-collector reverse. Due to thermal agitation of charge carriers can cross the barrier emitter of emitter-base potential and reach the base. In turn, almost all carriers that arrived are driven by the electric field between the base and collector.
An NPN transistor can be considered as two diodes with the shared anode region. In a typical operation, the base-emitter junction direct polarized in the base-collector junction is reverse polarized. In an NPN transistor, for example, when a positive voltage is applied to the base-emitter junction, the balance between thermally generated carriers and electric field depleted region repellent becomes unbalanced, allowing thermally excited electrons injected into the core region. These electrons "wandering" through the base, from the region of high concentration near the transmitter to the region of low concentration near the collector. These electrons in the base are called minority carriers because the base is doped

material P, which generate "holes" as majority carriers in the base. The core region of a transistor must be constructively thin for carriers to diffuse through this in much less time than the minority carrier lifetime of semiconductor, to minimize the number of carriers that recombine before reaching the base-collector junction. The thickness of the base should be less than the width of diffusion of electrons. Posted by: Emmanuel Angel