The transistor is composed of three areas of doping, as shown in the figure:
The upper zone is the "collector", the central area is the "Base" and the bottom is the "issuer". The Issuer is highly doped, the base has a very low doping, while the collector has an intermediate doping.
In this particular example the transistor is an npn device, but could be a pnp.
is similar in principle to two diodes A transistor looks like two diodes, the transistor has two connections: one between the emitter and the base and the other between the base and collector. The emitter and base are one of the diodes, while the collector and base form the other. These diodes are called "emitter diode (on the left in this case) and" collector diode (on the right in this case).
In this particular example the transistor is an npn device, but could be a pnp.
is similar in principle to two diodes A transistor looks like two diodes, the transistor has two connections: one between the emitter and the base and the other between the base and collector. The emitter and base are one of the diodes, while the collector and base form the other. These diodes are called "emitter diode (on the left in this case) and" collector diode (on the right in this case).
Before and after the broadcast
Let's do a study of the npn transistor, first when unpolarized (without batteries and open circuit) is a "diffusion" (as a gas in a bottle), where the electrons cross the area na p zone, diffuse, found a hole and recombine. This makes the joints between the n and p zones are created positive and negative ions.
Let's do a study of the npn transistor, first when unpolarized (without batteries and open circuit) is a "diffusion" (as a gas in a bottle), where the electrons cross the area na p zone, diffuse, found a hole and recombine. This makes the joints between the n and p zones are created positive and negative ions.
This diffusion and recombination takes to reach equilibrium until a potential barrier of 0.7 V (for Si). 2 ZCE are created, one at the EB junction (W E) and in the CB junction.
PREPARED BY:
NERWIN ANTONIO MORA REINOSO
CI: 17,557,095
ESS SECTION 1
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