Modelo en pequeña señal
The figure represents the small-signal model of a FET consists of two parameters: gm, or admittance factor, and rd, or output resistance and drain resistance. This notation is the most widely used to describe these parameters, although some manufacturers use the parameter notation {Y} or {G}, calling YFS or gfs to gm, and selves-1 or gos-1 or a rd ross. These parameters depend on the transistor bias current (ID), and the manufacturer provides the curves can be drawn from their values \u200b\u200bat different bias conditions. The following describes in more detail and rd paráetros gm.
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